STP100N6F7-STMICROELECTRONICS-60V 100A 5.6mΩ@10V,50A 125W 2V 1 N-Channel TO-220 MOSFETs ROHS

STP100N6F7-STMICROELECTRONICS-60V 100A 5.6mΩ@10V,50A 125W 2V 1 N-Channel TO-220 MOSFETs ROHS. STMicroelectronics is a high-current N-channel power MOSFET designed for low-voltage, high-efficiency switching applications. It features a drain-source voltage of 60 V and a continuous drain current of 100 A, with a very low Rds(on) of 5.6 mΩ at Vgs = 10V, ensuring minimal conduction losses. The MOSFET can handle up to 125 W of power dissipation and has a gate threshold voltage of 2 V for reliable switching. Housed in a TO-220 through-hole package, it provides excellent thermal management and ease of mounting. Note: Images for reference only.

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Specifications:

Manufacturer: STMicroelectronics Package: TO-220 Drain to Source Voltage: 60V Operating Temperature: -55℃~+175℃ Current - Continuous Drain(Id): 100A RDS(on): 5.6mΩ@10V,50A Pd - Power Dissipation: 125W Gate Threshold Voltage (Vgs(th)@Id): 2V Reverse Transfer Capacitance (Crss@Vds): 86pF Number: 1 N-Channel Input Capacitance(Ciss): 1.98nF Gate Charge(Qg): 30nC@10V For detailed specifications, please refer to datasheet in Attachments.

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Package Includes:

1 x STP100N6F7-STMICROELECTRONICS-60V 100A 5.6mΩ@10V,50A 125W 2V 1 N-Channel TO-220 MOSFETs ROHS