SPD04N80C3ATMA1-INFINEON TECHNOLOGIES-Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount

SPD04N80C3ATMA1-INFINEON TECHNOLOGIES-Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount. This is an N-channel power MOSFET optimized for high-voltage switching applications. It offers a drain-to-source voltage of 800 V and a continuous drain current of 4 A, providing reliable performance in demanding environments. With an on-resistance of 1.1 Ω, it balances efficiency and ruggedness, while the compact TO-252 (DPAK) surface-mount package supports space-saving designs and efficient heat dissipation. This MOSFET is well-suited for use in switched-mode power supplies, lighting ballasts, and other high-voltage energy-efficient applications. Note: Images for reference only.

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Specifications:

Manufacturer: INFINEON TECHNOLOGIES Channel Type: N Channel Case/Package: TO 252 Voltage Rating (V): 800 For detailed specifications, please refer to datasheet in Attachments.

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Package Includes:

1 x SPD04N80C3ATMA1-INFINEON TECHNOLOGIES-Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount