Irfp260N Mosfet Ic Dip-3 Package

The IRFP260N is a high-performance N-Channel Power MOSFET from Infineon Technologies, designed for efficient power switching applications. It features a low on-resistance of 0.04 Ω at a gate-source voltage (VGS) of 10 V, ensuring minimal conduction losses. The device can handle drain currents up to 50 A and drain-source voltages up to 200 V, making it suitable for high-power applications. Housed in a TO-247 package, it is commonly used in DC-DC converters, motor control circuits, and other power management systems.

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Note:

1. Product Images are shown for illustrative purposes only and may differ from the actual product.
2. For Technical Specifications about the IC go through the Datasheet in the Attachment section.

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Features:

1. Low On-Resistance: Offers a maximum R_DS(on) of 0.04 Ω at V_GS = 10 V, ensuring minimal conduction losses.
2. High Current Handling: Capable of continuous drain currents up to 50 A at 25°C, suitable for high-power applications.
3. Fast Switching Speed: Designed for efficient operation in low-frequency applications, enhancing overall system performance.
4. High Avalanche Energy Rating: Supports single-pulse avalanche energy up to 560 mJ, providing robustness against transient conditions.
5. Wide Operating Temperature Range: Operates effectively between -55°C and 175°C, accommodating various environmental conditions.

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Package Includes:

1 x IRFP260N MOSFET IC DIP-3 Package