IPD90N04S4-03-Infineon Technologies-40V 3.2mΩ@10V,90A 1 N-Channel TO-252-3 MOSFETs ROHS

IPD90N04S4-03-Infineon Technologies-40V 3.2mΩ@10V,90A 1 N-Channel TO-252-3 MOSFETs ROHS. This is a high-current N-Channel Power MOSFET engineered for efficient low-voltage, high-current switching applications. It features a drain-source voltage of 40 V, a continuous drain current of 90 A, and an ultra-low on-resistance of 3.2 mΩ at VGS = 10 V, ensuring minimal conduction losses and high efficiency. Housed in a compact TO-252-3 surface-mount package, it offers excellent thermal performance and easy PCB integration for DC-DC converters, load switching, power management, and automotive electronics. Note: Images for reference only.

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Specifications:

Manufacturer: Infineon Package: TO-252-3 Drain to Source Voltage: 40V Operating Temperature: -55℃~+175℃ Current - Continuous Drain(Id): - RDS(on): 3.2mΩ@10V,90A Pd - Power Dissipation: - Gate Threshold Voltage (Vgs(th)): - Reverse Transfer Capacitance (Crss@Vds): - Number: 1 N-Channel Input Capacitance(Ciss): - Gate Charge(Qg): - For detailed specifications, please refer to datasheet in Attachments.

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Package Includes:

1 x IPD90N04S4-03-Infineon Technologies-40V 3.2mΩ@10V,90A 1 N-Channel TO-252-3 MOSFETs ROHS