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IGB08N120S7ATMA1-Infineon Technologies-TO-263-3 IGBT, 20 A, 1.65 V, 87 W, 1.2 kV, 3 Pins — image 1
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INFINEON TECHNOLOGIES

IGB08N120S7ATMA1-Infineon Technologies-TO-263-3 IGBT, 20 A, 1.65 V, 87 W, 1.2 kV, 3 Pins

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IGBTs for everyday users

The IGB08N120S7ATMA1-Infineon Technologies-TO-263-3 IGBT, 20 A, 1.65 V, 87 W, 1.2 kV, 3 Pins by INFINEON TECHNOLOGIES is a value-for-money igbts designed for everyday users. It features Manufacturer: INFINEON TECHNOLOGIES and Case/Package: TO 263 3.

₹800
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Total: ₹800
Buying tip: A well-rounded choice at a fair price. Recommended for most buyers.
Estimated delivery: 21 Aug4 Sept
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Quick Specs

Manufacturer: INFINEON TECHNOLOGIES
Case/Package: TO 263 3
Collector Current (Ic-mA): 20 A
Shipping Weight: 0.001 kg
Shipping Dimensions: 1 × 1 × 1 cm

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Everyday convenience
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SKU: robu-2818436Category: IGBTs

About This Product

The IGB08N120S7ATMA1-Infineon Technologies-TO-263-3 IGBT, 20 A, 1.65 V, 87 W, 1.2 kV, 3 Pins by INFINEON TECHNOLOGIES is a value-for-money igbts designed for everyday users. It delivers reliable performance at an accessible price.

Key Specifications

  • Manufacturer: INFINEON TECHNOLOGIES
  • Case/Package: TO 263 3
  • Collector Current (Ic-mA): 20 A
  • Shipping Weight: 0.001 kg
  • Shipping Dimensions: 1 × 1 × 1 cm

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IGB08N120S7ATMA1-Infineon Technologies-TO-263-3 IGBT, 20 A, 1.65 V, 87 W, 1.2 kV, 3 Pins.

Note: Images for reference only.

Specifications:

Manufacturer: Infineon Package: TO-263-3 Pd - Power Dissipation: 87W Td(off): 149ns Td(on): 14ns Current - Collector(Ic): 20A Collector-Emitter Breakdown Voltage (Vces): 1.2kV Input Capacitance(Cies): 1.3nF@25V Gate-Emitter Threshold Voltage (Vge(th)@Ic): 5.15V@0.16mA Operating Temperature: -40℃~+150℃ Gate Charge(Qg): 55nC@8A,15V Vce Saturation(VCE(sat)): 2V@8A,15V Switching Energy(Eoff): 410uJ Turn-On Energy (Eon): 460uJ

For detailed specifications, please refer to datasheet in Attachments.

Package Includes:

1 x IGB08N120S7ATMA1-Infineon Technologies-TO-263-3 IGBT, 20 A, 1.65 V, 87 W, 1.2 kV, 3 Pins