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HMMDT55517F-HXY MOSFET-160V 200mW 100@10mA,5V 200mA NPN+NPN SOT-363 Bipolar (BJT) ROHS
The HMMDT55517F-HXY MOSFET-160V 200mW 100@10mA,5V 200mA NPN+NPN SOT-363 Bipolar (BJT) ROHS by HXY MOSFET is a value-for-money bipolar transistors designed for everyday users. It features Manufacturer: HXY MOSFET and Polarity: NPN.
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About This Product
The HMMDT55517F-HXY MOSFET-160V 200mW 100@10mA,5V 200mA NPN+NPN SOT-363 Bipolar (BJT) ROHS by HXY MOSFET is a value-for-money bipolar transistors designed for everyday users. It delivers reliable performance at an accessible price.
Key Specifications
- Manufacturer: HXY MOSFET
- Polarity: NPN
- Case/Package: SOT 363
- Collector Current (Ic-mA): 200
- Shipping Weight: 0.001 kg
- Shipping Dimensions: 1 × 1 × 1 cm
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Specifications:
Manufacturer: HXY MOSFET Package: SOT-363 Current - Collector Cutoff: 50nA Collector - Emitter Voltage VCEO: 160V Pd - Power Dissipation: 200mW DC Current Gain: 100@10mA,5V Current - Collector(Ic): 200mA Transition frequency(fT): 300MHz Vce Saturation(VCE(sat)): 200mV@50mA,5mA type: NPN+NPNFor detailed specifications, please refer to datasheet in Attachments.
