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FGD3N60UNDF-onsemi-60W 6A 600V NPT (non-penetrating type) TO-252 IGBT Transistors / Modules ROHS
The FGD3N60UNDF-onsemi-60W 6A 600V NPT (non-penetrating type) TO-252 IGBT Transistors / Modules ROHS by ONSEMI is a value-for-money igbts designed for everyday users. It features Manufacturer: ONSEMI and Case/Package: TO 252.
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About This Product
The FGD3N60UNDF-onsemi-60W 6A 600V NPT (non-penetrating type) TO-252 IGBT Transistors / Modules ROHS by ONSEMI is a value-for-money igbts designed for everyday users. It delivers reliable performance at an accessible price.
Key Specifications
- Manufacturer: ONSEMI
- Case/Package: TO 252
- Current Rating (A): 6
- Power Dissipation: 60W
- Voltage Rating (V): 600 — works with standard household power
- Shipping Weight: 0.001 kg
- Shipping Dimensions: 1 × 1 × 1 cm
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Specifications:
Manufacturer: onsemi Package: TO-252 Td(off): 22ns Pd - Power Dissipation: 60W Td(on): 5.5ns Operating Temperature: -55℃~+150℃@(Tj) Current - Collector(Ic): 6A Collector-Emitter Breakdown Voltage (Vces): 600V Input Capacitance(Cies): - IGBT Type: NPT (non-penetrating type) Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.52V@15V,3A Gate Charge(Qg): 1.6nC Reverse Recovery Time(trr): 21ns Switching Energy(Eoff): 0.03mJ Turn-On Energy (Eon): 0.052mJFor detailed specifications, please refer to datasheet in Attachments.
