2ED020I06-FI - 650 V Dual IGBT Half-Bridge Gate Driver IC
The 2ED020I06-FI - 650 V Dual IGBT Half-Bridge Gate Driver IC is a value-for-money drivers and interfaces ic designed for everyday users. It features Manufacturer: Generic and Input Voltage (V): 14 to 18.
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About This Product
The 2ED020I06-FI - 650 V Dual IGBT Half-Bridge Gate Driver IC is a value-for-money drivers and interfaces ic designed for everyday users. It delivers reliable performance at an accessible price.
Key Specifications
- Manufacturer: Generic
- Input Voltage (V): 14 to 18 — works with standard household power
- Length (mm): 25
- Width (mm): 13
- Weight (g): 3
- Shipping Weight: 0.001 kg
- Shipping Dimensions: 1 × 1 × 1 cm
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The 2ED020I06-FI is a high voltage, high-speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. The floating high side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver, the 2ED020I06-FI is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. Both drivers are designed to drive an N-channel power MOSFET or IGBT which operate up to 650V.
Features:
- Floating high side driver
- Undervoltage lockout for both channels
- 3.3 V and 5 V TTL compatible inputs
- CMOS Schmitt-triggered inputs with pull-down
- Non-inverting inputs
- Interlocking inputs
- Dedicated shutdown input with pull-up
- RoHS compliant
