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SI2302DS-T1-GE3-VB-VBsemi Elec-20V 5.1A 1.3W 1V 1 N-channel SOT-23 MOSFETs ROHS — image 1
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VBsemi

SI2302DS-T1-GE3-VB-VBsemi Elec-20V 5.1A 1.3W 1V 1 N-channel SOT-23 MOSFETs ROHS

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MOSFET for everyday users

The SI2302DS-T1-GE3-VB-VBsemi Elec-20V 5.1A 1.3W 1V 1 N-channel SOT-23 MOSFETs ROHS by VBsemi is a value-for-money mosfet designed for everyday users. It features Manufacturer: Vbsemi and Channel Type: N Channel.

₹515
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Total: ₹515
Buying tip: A smart budget buy — solid performance without breaking the bank.
Estimated delivery: 22 Aug5 Sept
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Quick Specs

Manufacturer: Vbsemi
Channel Type: N Channel
Case/Package: SOT 23
Voltage Rating (V): 20
Power Dissipation: 1.3W
Shipping Weight: 0.001 kg

Ideal For

Everyday convenience
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SKU: robu-2543318Category: MOSFET

About This Product

The SI2302DS-T1-GE3-VB-VBsemi Elec-20V 5.1A 1.3W 1V 1 N-channel SOT-23 MOSFETs ROHS by VBsemi is a value-for-money mosfet designed for everyday users. It delivers reliable performance at an accessible price.

Key Specifications

  • Manufacturer: Vbsemi
  • Channel Type: N Channel
  • Case/Package: SOT 23
  • Voltage Rating (V): 20 — works with standard household power
  • Power Dissipation: 1.3W
  • Shipping Weight: 0.001 kg
  • Shipping Dimensions: 1 × 1 × 1 cm

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SI2302DS-T1-GE3-VB-VBsemi Elec-20V 5.1A 1.3W 1V 1 N-channel SOT-23 MOSFETs ROHS. Note: Images for reference only.

Specifications:

Manufacturer: VBsemi Elec Package: SOT-23 Drain to Source Voltage: 20V Current - Continuous Drain(Id): 5.1A RDS(on): - Pd - Power Dissipation: 1.3W Gate Threshold Voltage (Vgs(th)@Id): 1V Reverse Transfer Capacitance (Crss@Vds): 55pF@10V Type: 1 N-channel Input Capacitance(Ciss@Vds): 865pF@10V Gate Charge(Qg): 8.8nC@4.5V Operating Temperature: -55℃~+150℃@(Tj) For detailed specifications, please refer to datasheet in Attachments.

Package Includes:

1 x SI2302DS-T1-GE3-VB-VBsemi Elec-20V 5.1A 1.3W 1V 1 N-channel SOT-23 MOSFETs ROHS